Photoetching of polymethyl methacrylate (PMMA) for pulsed high power UV light is demonstrated. As a high power UV light source, a KrF excimer laser was used. Etching depth obtained by deep UV light irradiation has not only energy dependence, but also power dependence. It increased abruptly by increasing the exposed power density for the same exposed energy density.These experimental results show that high power excimer lasers are the effective light source for UV photoetching of PMMA.
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Kawamura et al. (1982) studied this question.
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