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102-laser arrays with a period of 4.5 μm were fabricated using single-step metalorganic chemical vapor deposition and were operated uniformly with a threshold current of 1.8 mA per laser and a total output power of 850 mW/facet under continuous wave conditions at room temperature. The active layer of each laser, which was grown on a periodic-ridge-shaped GaAs substrate and was of a multi quantum well structure, was separated from the active layer of adjacent lasers by a current blocking layer, so each laser operated in a stable fundamental lateral mode.
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Hirata et al. (1991) studied this question.
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