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A simple technology for fabricating a short-cavity AlGaAs/GaAs laser with a high-reflective mirror that is compatible with batch processing is described. Chlorine-assisted ion beam etching was used for providing one of the facet reflectors. For increased reflectivity, the etched facet was anodized and then metallized simultaneously with the p-contact metallization step. A threshold current of 8 mA for a six-quantum-well separate confinement structure was achieved with a cavity length of 50 mu m.>
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Shieh et al. (1990) studied this question.
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