This paper presents a general method of calculation, allowing us to deduce the noise equivalent power in any type of avalanche photodiode. This method is checked by comparing numerical and analytical results for the case of a p-i-n junction. The calculation is applied to some Ga0.96Al0.04Sb diodes in order to estimate their performance and to deduce some trends for their optimization.
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Luquet et al. (1988) studied this question.
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