GaAlAsSb heterostructure low leakage photodiodes have been fabricated. These devices exhibit leakage currents of 7 to 9 nA (25–35 μA/cm2) and capacitances of approximately 1 pF at 20-V reverse bias. The devices are planar Be-implanted structures and have a net donor concentration of 2×1015 cm−3 in Ga1−xAlxAsSb (x∼0.15).
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Chin et al. (1982) studied this question.
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