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February 28, 1980Electronics Letters

InGaAs avalanche photodiode with InP p - n junction

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Authors

HKHiroshi KanbeKochi University of TechnologyNSNobuhiko SusaHitachi (Japan)HNH. NakagomeNTT Basic Research Laboratories

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Kanbe et al. (1980) studied this question.

synapsesocial.com/papers/6a893f259be9d02581bd5094https://doi.org/10.1049/el:19800117
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  1. 1Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes1980 · 62 citations
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  3. 3Multiplication noise in uniform avalanche diodes1966 · 1,471 citations