We describe p-i-n photodiodes fabricated from In0.53Ga0.47As grown lattice-matched on InP substrates. These diodes exhibit low junction capacitance (C<1 pF at 20 V reverse bias), low dark current (≈10 nA), high break-down voltage (110 V) and wide photoresponse extending beyond 1.7 μm.
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Leheny et al. (1979) studied this question.
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