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April 1, 1980Japanese Journal of Applied Physics

Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes

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Authors

YTYoshifumi TakanashiYamagata University HospitalMKMinoru KawashimaShimizu (Japan)YHYoshiji HoríkoshiWaseda University

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Takanashi et al. (1980) studied this question.

synapsesocial.com/papers/6a7236ee75498292b70b66f0https://doi.org/10.1143/jjap.19.693
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