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December 1, 1997Japanese Journal of Applied PhysicsOpen Access

Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy

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STSatoshi ToriiThe University of OsakaBSByoung-Rho ShimOsaka Research Institute of Industrial Science and TechnologyHYHaruyuki YasudaTohoku University

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Torii et al. (1997) studied this question.

synapsesocial.com/papers/6a7a3ff8e9a465269f0dcd0bhttps://doi.org/10.1143/jjap.36.l1645
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  1. 1Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs1994 · 244 citations