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A structure for discrete and integrated pressure sensors is proposed. A piezoresistive bridge pressure sensor and a pressure-sensitive MOS oscillator on this structure were fabricated and tested. The fully MOS-compatible technology, high-grade performance, intrinsically low temperature coefficient, and feasibility of fabrication are described to show the advantages of the new structure for production of discrete and, in particular, integrated pressure sensors and large-area sensor arrays.>
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Wang et al. (1991) studied this question.
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