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Time resolved imaging has been used to analyze structural transformations induced by intense 100 fs laser pulses in amorphous GeSb films. Above a threshold of 19 mJ/ cm² the data show the formation of a transient nonequilibrium state of the excited material within 300 fs. The results are consistent with an electronically induced, amorphous-to-crystalline phase transition.
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Sokolowski-Tinten et al. (1998) studied this question.
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