I n s i t u cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge

I n situ cleaning of GaAs surfaces has been achieved at 350 °C with a novel technique employing hydrogen that is excited and dissociated using a remote Ar discharge. Reconstructed surfaces characteristic of clean, As-stabilized GaAs surfaces have been observed with reflection high-energy electron diffraction following the cleaning treatment. Auger electron spectroscopy analyses confirm that such a treatment removes both carbon and oxygen contamination from the surface. X-ray photoelectron spectroscopy shows the removal of oxygen bonded to both Ga and As on the surface. Emission spectroscopy shows evidence of excited molecular and atomic hydrogen with the downstream-excitation process.