Zinc-doped p-type InP layers has been grown by the In/PCl3/H2 technique. It has been shown that the zinc atoms, incorporated during the growth, become electrically active after annealing. By photoluminescence study at 4.2 °K, it has been found that the main transition on the Zn level, in low-doped material, was situated at 1.377 eV; this transition shifts to 1.382 eV in higher-doped material.
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Chevrier et al. (1980) studied this question.
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