An improved technique is described for the growth of InP by liquid‐phase epitaxy. The use of gold‐plated reflector tubes in the furnace design has improved the control of layer quality, and background doping levels have been consistently reduced to 3 × 10 15 / cm 3 by replacing polycrystalline InP by PH 3 ( g ) as a source of phosphorus. The behavior of the dopants Sn, Ge, Si, Te, Zn, Cd, and Bi in InP are discussed and the distribution coefficients “ k ” are found to be k Sn = 0.0019 , k Ge ≏ 0.005 , k Si ≏ 4 , k Te = 0.27 , k Zn = 1.14 , k Cd ≃ 0.002 , k Bi ≏ 0.002 to 0.0002 The dopants Sn and Zn were found to be the most suitable for n and p doping for LED fabrication. The Group IV elements yielded n‐type material only, although the mobility measurements indicated possible amphoteric behavior for Ge. The Hall mobilities at room temperature for the n‐type samples show good agreement with theory.
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Astles et al. (1973) studied this question.