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August 11, 2026Advanced Functional MaterialsOpen Access

Enhanced Stochasticity in Irradiated Vanadium Oxide Oscillators

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Authors

NGNareg GhazikhanianDADavid J. AlspaughPSPavel Salev

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Overview

Randomized trial explores electrical behavior changes in irradiated vanadium oxide, suggesting novel engineering methods.

Key Points

  • The aim is to investigate how focused ion beam irradiation affects the stochastic dynamics in vanadium oxide oscillators.
  • Used focused ion beam irradiation on vanadium oxide devices to induce oscillatory dynamics.
  • Conducted random resistor network simulations to analyze switching properties.
  • Measured voltage-induced changes in current flickering and oscillation behaviors.
  • Observed dramatic current flickering in irradiated devices with increased voltage, indicating stochastic behavior.
  • Demonstrated reduced power needed for switching compared to pristine materials.
  • Showed that local defect sites significantly influence electrical switching properties.

Cite This Study

Ghazikhanian et al. (2026) studied this question.

synapsesocial.com/papers/6a7ace0a3401087f2249da5fhttps://doi.org/10.1002/adfm.202529777
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