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January 15, 1984Physical review. B, Condensed matter

Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV

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DAD. E. AspnesNorfolk State UniversityASA. A. StudnaAT&T (United States)EKE. KinsbronMurray State University

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Aspnes et al. (1984) studied this question.

synapsesocial.com/papers/6a7acfbaa51ded8e7b32e9ebhttps://doi.org/10.1103/physrevb.29.768
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