Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs

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The frequency-tripled neodymium-doped yttrium aluminum garnet laser ( 355 nm ) and the KrF pulsed excimer laser ( 248 nm ) were employed to separate GaN thin films from sapphire substrates and to transfer the films to bond with other substrates. The different laser lift-off processes would generate the dislocation density on different regions. In this study, the effects of these two laser sources on structural damage mechanisms and reverse-bias leakages of InGaN–GaN light-emitting diodes (LEDs) were studied.