Methodological study demonstrates laser lift-off of n-GaN films via infrared absorption in heavily doped substrates, suggesting an efficient detachment mechanism for semiconductor fabrication.
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n +-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n +-GaN films.
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Virko et al. (2016) studied this question.
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