An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface

This is the authors' abstract. We don't add key points for this paper.

We demonstrate removal of homoepitaxially grown semi-polar gallium nitride (GaN) layers from the native substrates. The weak link at the interface of the epitaxial lateral overgrowth and cleavable m -plane of the respective native semi-polar plane is used to separate homoepitaxial GaN from its native substrate. Homoepitaxial GaN layers of the semi-polar planes, (10 1), (20 1), (30 1), (10 ), (20 ), and (30 ) are successfully removed. This approach allows the reuse of expensive semi-polar GaN substrates, eliminating one barrier to market introduction of superior optoelectronic devices grown with semi-polar orientations.