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The origin of the promotion of oxidation when an ion gauge is turned on during oxygen exposure on cleaved Si(111) was studied by photoemission ( h v =55, 130eV). The reactivity in the oxide formation of ions, neutral excited species, and ground state oxygen molecules has been measured. The origin of the promotion of oxidation was attributed to ions, and the efficiency in the oxide formation of ions has been found to the greater than that expected from the amount of incident ions.
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Daimon et al. (1982) studied this question.
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