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We investigated correlations between nanoscopic optical and structural properties in violet-emitting, blue-emitting, and green-emitting InₓGa_1-xN/GaN quantum wells (QWs) by means of scanning near-field optical microscopy (SNOM) and atomic force microscopy. Only in the blue-emitting QW, threading dislocations were not major nonradiative recombination centers (NRCs). SNOM data indicated that NRCs in the blue-emitting QW are surrounded by energy levels higher than those for radiative recombination. Such potential distributions realize ``antilocalization'' of carriers to NRCs, which is the cause of high emission quantum efficiencies in blue emitters.
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Kaneta et al. (2008) studied this question.
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