Detection of magnetic resonance on photoluminescence from a Si/Si₁₋ₓGeₓ strained-layer superlattice

Optically detected magnetic resonance has been employed for the first time on photoluminescence from a Si/Si_1-x{Ge}ₓ$ strained-layer superlattice. Emission bands occur at 0.87 and 0.8 eV. One of the resonances is anisotropic with ${g}?=4.46±0.05 and{g}_{{{⊥}}}$0.4 and is assigned to holes of the ${J}z$=±{}3/2 valence band in the SiGe layers. This result demonstrates that at least part of the emission must originate from the superlattice region of these structures.