Bottom-up vertical GaN nanocolumn Schottky barrier diodes with extremely high packing density grown by molecular beam epitaxy

In this paper, we report achieving extremely high-density packing in high-voltage vertical gallium nitride (GaN) nanocolumn Schottky barrier diodes (NC-SBDs) through the adoption of a bottom-up process. The NC-SBDs were formed via epitaxial growth using Titanium-mask selective area growth (Ti-SAG) by rf-plasma-assisted MBE (rf-MBE), realizing a packing density equivalent to exceeding 10 million columns/mm 2 . Our fabricated NC-SBDs with a period of 300 nm, a diameter of 250 nm, and a drift length of 1.3 μ m demonstrated a breakdown voltage (BV) of 260 V with an on-resistance of 2.0 mΩcm 2 , yielding an excellent figure of merit of 33.8 MW/cm 2 for nanocolumn-based high-voltage devices. We also discuss dielectric reduced surface field effect and impurities within the nanocolumns as potential factors contributing to the achievement of higher BV devices.