Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy

Gold Schottky diodes have been fabricated, for the first time, on n-type GaN grown by molecular beam epitaxy. These diodes have been studied by I - V, C - V and deep-level transient spectroscopy. The conduction process inside the diodes is shown to be by thermionic field emission. The barrier height of 1.1 eV compares well with Au Schottky diodes manufactured from n-GaN grown by metalorganic chemical vapour deposition. However, there is evidence to suggest that the grown-in deep levels are different for the two growth techniques.