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November 8, 1993Applied Physics Letters

Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy

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PHPeter HackeNational Renewable Energy LaboratoryTDTheeradetch DetchprohmGeorgia Institute of TechnologyKHK. HiramatsuKyushu University

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Hacke et al. (1993) studied this question.

synapsesocial.com/papers/6a8916da03fab2a419a5ef13https://doi.org/10.1063/1.110417
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