We analyzed the intrinsic defects and the n-type-carrier concentration generated by nitrogen ion implantation in n-type GaN by deep-level-transient spectroscopy and by capacitance–voltage measurements, respectively. The samples were grown on sapphire by metalorganic vapor-phase epitaxy. Nitrogen implantation with different ion doses and postimplantation rapid-thermal annealing (RTA) were investigated. We observed a growing n-type-carrier concentration and increasing defect concentration with increasing nitrogen ion implantation doses. After RTA the concentration of free carriers and deep levels as found in the as-grown state are restored. We also address contrarily seeming results from measurements of sheet resistance after N implantation published recently.
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Haase et al. (1996) studied this question.