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The commutating safe operating area (CSOA) of DMOS FETs is determined by the peak reverse-recovery current and the peak reapplied voltage. Both contribute to the triggering of localized turn-on of the built-in bipolar junction transistor (BJT). New DMOS FETs with lower bipolar gain and shorter minority-carrier lifetime have doubled the CSOA capability.>
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Tsui et al. (1994) studied this question.
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