Demonstrates a novel WS2/WO3 photodetector achieving high performance across UV to NIR wavelengths, indicating significant advancements in optoelectronic applications.
Photodetectors play a crucial role in advancing optoelectronic technologies. This study presents a unique WS 2 /WO 3 heterostructure-based broadband photodetector fabricated using sputtering and CVD techniques and optimized through a high-temperature vacuum sulfurization process. Unlike earlier studies that limited WS 2 /WO 3 junctions to UV–vis detection, this research is the first to extend their functionality into the NIR region, achieving an impressive responsivity of 1.933 A/W─one of the highest values reported for such heterostructures. The device exhibits outstanding performance from UV to NIR, with a detectivity of 7.3 × 10 10 Jones, an EQE of 221%, NEP of 7.0 × 10 –14 W/Hz 1/2 and ultrafast response times (rise: 66 ms, decay: 73 ms). The superior photodetection capability is attributed to the type-II band alignment, enabling efficient charge separation. This innovative method establishes WS 2 /WO 3 as a highly efficient broadband photodetector, making it suitable for applications in optical communication, medical imaging, and low-light vision.
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Tanzeem et al. (2025) studied this question.
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