Answers are grounded in this paper and cite their sources.
We clarified the degradation behaviors of semi-insulating buried heterostructure lasers in which mesa structures were fabricated by reactive ion etching (RIE) and then buried in semi-insulating Fe-doped InP grown by metal organic vapor phase epitaxy (MOVPE). The degradation rate and mode correlated with the quality of the buried heterostructure (BH) interface. Based on the correlation, a condition for highly stable semi-insulating Fe-doped InP buried heterostructure (SIBH) lasers was demonstrated and confirmed experimentally and statistically.
No takes yet. Share an insight, caveat, or question.
Mawatari et al. (1997) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: