Answers are grounded in this paper and cite their sources.
The fabrication and lasing characteristics for planar surface buried-heterostructure InGaAsP/InP lasers with highly resistive current-blocking layers are reported. Embedding growth was successfully performed by Fe-doping hydride VPE. Single transverse mode operation has been realised in lasers with a narrow active region, without any nonradiative recombination increase, due to an Fe-associated deep level. High-frequency response up to 10GHz was also demonstrated.
No takes yet. Share an insight, caveat, or question.
Sugou et al. (1986) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: