High-quality 1.3-μm GaInAsP-BH-lasers fabricated by MOVPE and dry-etching technique

High-quality and high-reliability GaInAsP-InP Fabry-Perot-type buried heterostructure strained-multi-quantum-well lasers operating at 1.3 pm have been produced by metalorganic vapor phase epitaxy growth and the dry-etching technique. We compare two types of chemical treatments to slightly etch damaged mesa-walls before regrowth after dry-etching. Slight chemical etching prevents Zn in the p-type buried layer from diffusing to the active layer during regrowth of buried hetero layers. Two step treatment using the combination of selective and unselective wet chemical etching produces a superior mesa-wall which has limited Zn-diffusion to the active layer. BH laser fabricated by MOVPE and the dry-etching technique is also confirmed as having high-reliability in practical usage.