1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

A 1.5 μm GaInAsP/InP buried-heterostructure laser diode was fabricated by reactive ion etching using a mixture of ethane and hydrogen for the formation of mesa stripe. Blocking layers were regrown on the dry etched wafers by liquid phase epitaxy. Continuous-wave operation was obtained at room temperature. A threshold current as low as 15 mA was achieved, which is superior to that of the same structure laser diode fabricated by conventional chemical etching.