Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETs

This work summarizes the results of several experiments to investigate the potential applications of Silicon-Germanium alloy in the fabrication of shallow source/drain (S/D) extension Junctions for deep submicron PMOS transistors. Two approaches were used for the fabrication of p/sup +/-Si/sub 1-x/Ge/sub x//n-Si heterojunctions. In the first approach, high dose Ge ion implantation followed by boron implantation into Si was used to form very shallow p/sup +/-Si/sub 1-x/Ge/sub x//n-Si junctions (x/spl les/0.2). In the second approach, thin Ge films were deposited onto Si substrates by conventional low pressure chemical vapor deposition. This was followed by boron implantation into the Ge and thermal annealing to co-diffuse Ge and B atoms into Si and form p/sup +//n heterojunctions. The electrical characteristics of the heterojunction diodes were comparable to those of conventional Si (homo) junctions. Secondary ion mass spectrometry (SIMS) concentration-depth profiles indicate that dopant segregation in the Si/sub 1-x/Ge/sub x/ regions resulted in the formation of ultra-shallow and abrupt junctions that could be used as S/D extensions for sub-100 nm CMOS generations. PMOS transistors fabricated using these techniques exhibit superior short-channel performance compared to control devices, for physical gate lengths down to 60 nm.