The heat treatment effect on supersaturated Si crystals with B, P, or As produced by high-dose ion implantation (8×1015 cm-2) and Q-switched ruby laser annealing (2.0 J/cm2) is investigated. The deactivation of excess B atoms becomes appreciable with a high-temperature heat treatment above 800°C, while deactivations of excess P and As atoms take place even at low temperatures of 300–400°C. The deactivation process of B atoms at such high temperatures was found to be a precipitation of B atoms with an activation energy of 3.2 eV using Hall effect measurements and transmission electron microscopy observation.
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Itoh et al. (1982) studied this question.
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