This review highlights electric-field-induced magnetization reversal in cobalt-substituted BiFeO3, suggesting implications for memory applications.
Electric-field control in multiferroic materials is attracting attention for next-generation memory devices with low power consumption and non-volatility. This review overviews magnetization reversal in cobalt-substituted BiFeO3 (BiFe1－xCoxO3), a single-phase room-temperature multiferroic material. Experimental results from microscopic direct observations of domain structures using scanning probe microscopy are summarized, highlighting how electric-field-induced magnetization-reversal is influenced by domain structures, film orientations, and switching angles. These insights offer a clear perspective toward magnetoelectric memory applications of BiFe1－xCoxO3.
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Shigematsu et al. (2026) studied this question.
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