The blueshifting of photoluminescence spectra of porous silicon structures formed in p-type silicon is shown to be related to stresses in the porous material. A characteristic cellular structure, with varying length scale, is observed in the high porosity films due to high surface stresses. The cellular structure is not formed during the secondary open-circuit etching procedure itself but occurs during evaporation of the electrolyte after removal of the porous silicon from the etching solution.
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Friedersdorf et al. (1992) studied this question.
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