Effects of both neutral and charged defects on optoelectronic properties have been investigated in a-Si:H, Si 1- x C x :H, Si 1- x N x :H and Si 1- x O x :H films by separating both kinds of defects. The increase in the density of neutral defects decreases the photoconductivity because they work as a recombination center for optically excited electrons in the conduction band. On the other hand, the increase in the density of charged defects increases the decay time of the photocurrent after the light-off because they work as a trapping center for the electrons.
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Kumeda et al. (1990) studied this question.
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