High-temperature light-induced effects in hydrogenated amorphous silicon

Light-induced metastable defects are investigated above 200 ^∘{}C in undoped and hydrogenated amorphous silicon. It is observed that there are two kinds of metastable defects, leading to dark-conductivity and photoconductivity decreases, respectively. Our results suggest that the defects responsible for the photoconductivity decrease are annealed through intermetastable defects which give rise to the increase of the dark conductivity.