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After rapid cooling from 483 K, the characteristic electron-spin-resonance (ESR) signal in hydrogenated amorphous silicon (a-Si:H) has been observed to grow with time at room temperature. This increased ESR signal anneals at temperatures above {~}370 K. These results have a significant effect on our understanding of the electronic states in a-Si:H.
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Lee et al. (1987) studied this question.
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