Answers are grounded in this paper and cite their sources.
Degradation of GaAs/AlGaAs double-heterostructure light-emitting diodes under accelerated aging tests has been investigated through cathodoluminescence measurements. We observed an increase in intensity of the band-edge emission and a decrease in that of defect-related deep level emision for the cladding layers. As for the active layer, a decrease was observed in the intensity of the band-edge emission. These results suggest that defects migrate gradually from the cladding layer into the active layer.
No takes yet. Share an insight, caveat, or question.
Ogawa et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: