Hall and Drift Mobility in High-Resistivity Single-Crystal Silicon

Room-temperature Hall and drift mobilities have been measured for samples of single-crystal silicon ranging in resistivity from about 10^-2 ohm cm to nearly intrinsic. The Hall mobility figures indicated for lattice scattering are 1560 and 345 cm²/volt sec for electrons and holes respectively, whereas drift mobility values of 1360 and 510 cm²/volt sec for electrons and holes, respectively, are found.