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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices, Yacoub, H, Fahle, D, Finken, M, Hahn, H, Blumberg, C, Prost, W, Kalisch, H, Heuken, M, Vescan, A
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Yacoub et al. (2014) studied this question.
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