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A new structure semi-insulator-embedded flat-surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold currents as low as 18 mA and high-temperature cw operation up to 100 °C have been obtained. Small-signal response above 4 GHz has been achieved and no remarkable roll-off has been observed, which is due to small parasitic capacitance.
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Tanaka et al. (1985) studied this question.
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