Resistive Switching in Nonperovskite-Phase CsPbI₃ Film-Based Memory Devices

This is the authors' abstract. We don't add key points for this paper.

Because of their attractive photoelectrical properties, perovskite-phase, CsPbX 3 (X = I, Br, or Cl) materials have recently gained attention for their applications in resistive switching (RS) memories. However, phase transition of the CsPbI 3 from perovskite (cubic phase) to nonperovskite (orthorhombic phase) at room temperature is problematic; it remains a challenge to apply nonperovskite CsPbI 3 in RS memories. In the present work, a polymethylmethacrylate (PMMA)-assisted deposition method for nonperovskite CsPbI 3 is introduced to fabricate a composite film of CsPbI 3 with PMMA (PMMA@CsPbI 3 ) with a smooth surface morphology on fluorine-doped tin oxide (FTO) substrates. Devices with a Ag/PMMA@CsPbI 3 /FTO architecture show nonvolatile RS characteristics with an ON/OFF ratio around 10 2, endurance over 500 cycles, and a retention time of 10 3 s. Analyses suggested that a Schottky barrier at the Ag/PMMA@CsPbI 3 interface and a bias-induced migration of Ag ions within the composite films are responsible for the RS operation. This is the first record for RS devices based on nonperovskite CsPbI 3, and it may bring the future research on nonperovskite CsPbI 3 applied in RS memory devices some new inspiration..