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We have grown a series of films of the ternary alloy GaxIn1−xAs on (100) InP near the lattice-matched composition Ga0.47In0.53As. The results show clearly that the distribution coefficient of gallium is about 10% larger for growth on the (100) face than on the (111B) face of InP. Thus we show that the solid composition obtained in liquid-phase epitaxy under near-equilibrium growth conditions is strongly affected by factors other than the liquid composition and temperature.
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Pearsall et al. (1978) studied this question.
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