Laser annealing of polyetheretherketone (PEEK)

Changes in the crystalline morphology and thermal behavior of amorphous poly(etheretherketone) (PEEK) films have been effected by irradiation with a continuous wave CO 2 laser. At high laser scan rate and power, PEEK films melt and requench into amorphous transparent films. At a scanning velocity of 14 μm/s and incident intensities ≥ 4.8 W/cm 2 and a Gaussian beam radius of 1.63 mm, PEEK films crystallize “completely” above T g on laser annealing. Irradiation of PEEK films on a quartz substrate reduces the cooling rate, allowing slower and more perfect recrystallization. Similar changes are effected by reducing the laser scan velocity or by increasing the laser power. Depending on the experimental conditions, laser induced recrystallization may occur on annealing above T g or on cooling from the melt.