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July 26, 2006IEEE Electron Device Letters

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

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Authors

RWRuonan WangHenan University of TechnologyYCYong CaiUniversity of Science and Technology of ChinaCTChak Wah TangHong Kong University of Science and Technology

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Wang et al. (2006) studied this question.

synapsesocial.com/papers/6a7c93ebf108d7d7faba47c2https://doi.org/10.1109/led.2006.879046
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