In this study we successfully demonstrate a method for diffusion wafer bonding. We were able to achieve a high-melting-point bonding interface at a relatively low bonding temperature of . The interdiffusion coefficient is defined against the Au content. Au atoms have a faster diffusion rate in the matrix layer, which causes the interface to move toward the Au side over time. The use of this method of diffusion bonding makes the fabrication of high-power thin- light-emitting diode chips on Si wafers a feasible possibility.
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Chang et al. (2007) studied this question.
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