The electrical characteristics of pn junctions formed by direct bonding of silicon wafers in ultra-high vacuum have been quantified. The bonding process produces low reverse leakage <1 μA/cm2 and near-ideal forward current. The observation of bulk-like bonded interfaces is supported by transmission electron microscopy and infra-red transmission imaging.
No takes yet. Share an insight, caveat, or question.
Hobart et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: