Double coaxial carbon nanotubes with nitrogen (N)-doped and boron (B)-doped multiwalls possess composite Raman characteristics, originating not only from the outer N-doped but also from inner B-doped layers. Both N and B dopings result in substantial shifts of the characteristic D band and G band of sp(2) carbon constituting nanotube walls but in different ways. The downshift of the G band is correlated with the decreases of electrical resistivity of carbon nanotubes regardless of N or B doping.
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Yang et al. (2005) studied this question.
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